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Reflection And Discussion On Absorption Spectra

Institute of Applied Physics, No. This article is part of the thematic issue "Functional nanostructures for electronics, spintronics and sensors".

Associate Editor: P. Leiderer Beilstein J. The experimental results regarding optical absorption and steady-state photoconductivity of amorphous single-layer structures Al—As 0.

INTRODUCTION

The obtained experimental results are discussed taking into account the light absorption depending on the nature and the thickness of each amorphous layer, on the wavelength, and on contact phenomena at the interfaces between different layers and between the amorphous layers and the metal electrodes with different work functions. Keywords: amorphous multilayer structures; photocurrent; transmission spectra. The As—S—Se, Ge—As—Se, and Ge—As—S ternary glass systems currently attract a lot of attention because of their wide application in IR optics, non-linear optics, photonics, optoelectronics, and as recording media for holography and e-beam lithography []. The physical properties of covalently bonded glasses are determined by the mean coordination number Z Oh number of covalent bonds per atom [4].

It is well known that the functionality of many photonic and optoelectronic devices is based on the intrinsic photoelectric effect. The photocurrent spectra and the Reflection And Discussion On Absorption Spectra Ane the photocurrent can provide information regarding the mechanisms of generation, recombination, and drift processes of non-equilibrium carriers in amorphous materials.

Thus, investigations of stationary and transient characteristics of the photoconductivity of ternary amorphous thin films are of special interest. For thermally deposited amorphous films, the structure of which exhibits a higher Spetra of disorder than that of the bulk glasses, the incorporation of impurity atoms is easier, and in many cases the metal additives could become electrically active. The influence of Sn impurities on stationary and transient photoconductivity was demonstrated for amorphous As 2 Se 3 Sn x thin films [5]. The introduction of Sn in the host material increases the drift mobility and Spectraa photosensitivity of the amorphous material. It was established that the predominant mechanisms of recombination of the photo-excited carriers in the investigated amorphous materials are mono- and bimolecular and that the transport is controlled through multiple trapping processes with exponential distribution of the localized states Reflection And Discussion On Absorption Spectra the bandgap.

Regarding the physics and applications of chalcogenide materials, multilayered amorphous thin-film structures are especially interesting because they offer advantages over single-layer structures [9,10]. The bulk chalcogenide glasses As 0. The ampoules were then let to cool in air to room temperature.

Introduction

Some of the Rflection samples were then cut and polished for optical measurements; other samples were prepared as granules of small dimensions for vacuum evaporation. Longitudinal, instead of lateral, conductivity measurements were carried out. The thickness of each layer was chosen such that the distribution of the applied electrical field was as uniformly as possible Reflection And Discussion On Absorption Spectra each layer. In the same technological cycle, the multilayer heterostructure HS Al—As 0.

The experimental samples had a sandwich configuration with two Al electrodes, of which the top electrode was transparent to the incident light. The thin film layer Ge 0. The amorphous structures described above with two Al electrodes, of which the upper one was transparent to the incident light, have been used for electrical and photoelectrical measurements.

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Figure 3: Current—voltage characteristics of the amorphous thin-film HS with a positive voltage applied to the top Al electrode, in the dark 1 and under illumination 2. Figure 3: Current—voltage characteristics of the amorphous thin-film HS with a positive voltage applied to th Figure 4: Current—voltage characteristics of the amorphous thin-film HS with a negative voltage applied to the top Al electrode, in the dark 1 and under illumination 2. Figure 4: Current—voltage characteristics of the amorphous thin-film HS with a negative voltage applied to th When a positive voltage is applied to the top Al electrode, a sharp increase of the Reflsction occurs, only under illumination, when the applied external electric field reaches high values. When a negative voltage is applied, this sharp increase of the current occurs in dark and Reflection And Discussion On Absorption Spectra illumination.

When carriers are injected from Reflection And Discussion On Absorption Spectra amorphous or crystalline layer or electrode into another amorphous layer, m cannot take values larger than 1. In this case the I — V characteristics are described by the expression [15] :. We thank for fruitful discussion and we suggest that for more detailed information regarding the origin of SCLC in our investigated structures, additional investigations of the I — V characteristics at different temperatures are needed for the estimation of the parameters of localized states.

The steady-state photocurrent spectra show that the maximum of photosensitivity of the component layers of the multilayer HS is in a good agreement with the absorption spectra. The spectral distribution of the photocurrent for the HS is situated between the distributions of the separate layers and depends on the polarity of the illuminated Discuxsion. The positions of click at this page maximum of Al—Ge 0. Figure 5: Photocurrent spectra of separate amorphous thin films and the multilayer HS with a positive voltage applied to the illuminated top Al electrode.

Figure 5: Photocurrent spectra of separate amorphous thin films and Discudsion multilayer HS with a positive voltage]